发明名称 METHOD TO FORM NARROW STRUCTURES USING DOUBLE-DAMASCENE PROCESS
摘要 <p>A narrow groove is formed over a substrate. To form such a narrow groove, a first material is formed over a substrate, the first material having a sidewall. A spacer is formed abutting the sidewall. Subsequently a second material is formed adjacent to the spacer. The spacer is removed leaving a groove between the first material and second material. In one embodiment, the groove is filled with material for a narrow feature, such as a gate, and the first material and second material are removed. As a result a gate or other narrow feature is formed having a length defined by the width of a spacer. In another embodiment, an implant is performed through the small groove, resulting in a small localized implant.</p>
申请公布号 WO2001011675(A1) 申请公布日期 2001.02.15
申请号 US2000006616 申请日期 2000.03.14
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