METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is to reduce the dependence of a plane resistance on the line width of a circuit of silicide, thus to prevent from increasing of the plane resistance even reducing of the line width. CONSTITUTION: A manufacturing method of a semiconductor device comprises the steps of: forming a gate electrode(23) by depositing a gate insulation layer(22) on a semiconductor substrate(21); forming a sidewall spacer(25) on both sides of the gate electrode; forming a source/drain region on the substrate of both sides of the gate electrode; selectively removing the exposed gate electrode and the substrate to form an uneven surface; depositing a metal layer on the substrate and annealing the same to form a silicide layer on an interface of the gate electrode and the substrate; and removing the metal layer which did not react with the substrate and the gate electrode.