PHOTOVOLTAIC ELEMENT AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce deterioration in characteristics caused by creeping and reduce an ineffective part by forming a semiconductor layer at the front side almost over an entire substrate and making the area of a semiconductor layer at the rear side smaller than that of a substrate. SOLUTION: An amorphous silicon intrinsic semiconductor layer 2 and an n-type amorphous silicon conductivity semiconductor layer 3 are formed one by one by using a plasma CVD method on the rear of an about 100 to 500μm thick crystalline semiconductor substrate 1 of n-type single crystalline silicon of a 100-by-100 mm square. The intrinsic semiconductor layer 2 and the conductivity type semiconductor layer 3 are formed in an area, which is smaller than that of the semiconductor substrate 1. Then, a amorphous silicon intrinsic semiconductor layer 4 and a p-type amorphous silicon conductivity type semiconductor layer 5 are formed one by one almost all over a surface of the semiconductor substrate 1 by adopting plasma CVD method.