发明名称 PHOTORESIST MONOMER, COPOLYMER THEREOF AND PHOTORESIST COMPOSITION USING SAME
摘要 PURPOSE: A novel photoresist monomer and photoresist polymer resin containing oxabicyclo derivatives as a monomer and capable of manufacturing a photoresist having high resolution and remarkably increasing the sensitivity of a photosensitizer are provided, which obtain a photoresist composition applicable to a high density fine pattern of less than 0.15 micrometer and can manufacture a semiconductor element with excellent reliability. CONSTITUTION: The oxabicyclo derivatives of formula 1 used as a photoresist monomer are prepared by a process consisting of: dissolving furan in an organic solvent and cooling at -25 to -35deg.C; reacting the resultant with a compound of formula: CH2=CH-(CH2)m-COOR1 having the same molar ratio as the furan for 8 to 12 hr and then reacting for 8 to 12 hr at an elevated temperature; and separating the object compound from the resulting solution by removing the organic solvent. In formula, R1 is H or C1-10 substituted or nonosubstituted straight or side chained alkyl, cycloalkyl, alkoxyalkyl or cycloalkyl; and m is an integer selected from 0 to 3. The photoresist copolymer contains one or more of the compound of formula 1.
申请公布号 KR20010011766(A) 申请公布日期 2001.02.15
申请号 KR19990031296 申请日期 1999.07.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAEK, GI HO;JUNG, JAE CHANG;JUNG, MIN HO;LEE, GEUN SU
分类号 G03F7/039 主分类号 G03F7/039
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