发明名称 METHOD FOR DETERMINING OVERLAP OF PATTERN
摘要 PURPOSE: A method for determining overlap of a pattern is to display a misalignment data when a detected alignment error value of a die is not within an allowable range of an alignment error. CONSTITUTION: A method for determining overlap of an upper photoresist pattern and a lower pattern comprises the steps of: setting an allowable value of alignment error on each die of a wafer; calculating an alignment error value after determining overlap on each die of the wafer; comparing the alignment error value with the allowable value of alignment error; displaying a misalignment data when the alignment error value of a die is not within the allowable range of the alignment error; and determining whether subsequent process is again progressed or not. The misalignment data comprises a coordinate of the die, an allowable value of an alignment error, and an alignment error value.
申请公布号 KR20010011591(A) 申请公布日期 2001.02.15
申请号 KR19990031045 申请日期 1999.07.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, JEONG HUI
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址