GAIN-COUPLED TYPE OF SINGLE MODE SEMICONDUCTOR LASER AND METHOD OF MAKING THE SAME

摘要

PURPOSE: A gain-coupled type of single mode semiconductor laser is provided to minimize an optic loss and simplify the manufacturing process. CONSTITUTION: In a method of making a semiconductor laser having a diffracting grating, a silicon nitride film or a silicon oxide film is formed as the diffracting grating on the first epitaxial layer. The second epitaxial layer is developed on the whole surface on which the silicon nitride film or the silicon oxide film was formed. In a gain-coupled type of single mode semiconductor laser, an active layer(22) and the first clad layer(23) are applied sequently on the substrate(21). a diffracting grating (24) of a silicon nitride or a silicon oxide is formed on the first clad layer. The second clad layer(25) and a resistive electrode contact layer(26) are applied sequently over the diffracting grating layer.