发明名称 FIELD EMITTER FABRICATION USING MEGASONIC ASSISTED LIFT-OFF
摘要 A method for removing a lift-off layer (214) and an overlying closure layer (218) formed during manufacture of a field emitter structure having at least one emitter (220) on a substrate (202) comprising: a) immersing the field emitter structure in an etchant which attacks the lift-off layer (214) and b) activating a vibrational transducer (410) immersed in the etchant to subject the lift-off and closure layers to vibrational forces which aid in removing these layers (214, 218) from the emitter structure (210, 206, 220). The transducer (410) is preferably a megasonic transducer. After rinsing etchant from the emitter structure, the emitter structure may be dried using an alcohol-based fluid displacement drying process.
申请公布号 KR20010012134(A) 申请公布日期 2001.02.15
申请号 KR19997010055 申请日期 1998.02.11
申请人 CANDESCENT TECH CORP 发明人 WILLIAMS DALE A
分类号 H01J9/02;(IPC1-7):F24D5/02 主分类号 H01J9/02
代理机构 代理人
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