| 摘要 |
PURPOSE: A new photoresist monomer capable of being used in an area of deep ultraviolet light, polymers containing the monomer and photoresist composition containing the polymer are provided, which has excellent etching resistance and heat resistance and can remarkably enhance post exposure delay stability of an ArF resist. CONSTITUTION: The bicyclo compound of formula 1 is used as a photoresist monomer and contains morpholine derivatives. In a photoresist composition containing a photoresist resin, an organic solvent and a photoacid generator, the composition is a copolymer containing the compound of formula 1 as a first monomer, one or more compounds of formula 14, formula 15 and formula 16 as a second monomer and maleic anhydride as a third monomer, wherein the photoacid generator is used in a ratio of 0.05 to 10% by weight and the organic solvent in a ratio of 200 to 1,000% by weight based on the resin respectively. |
