| 摘要 |
PURPOSE: A storage electrode of a semiconductor is provided to improve a process margin by designing a storage electrode with same pitch in direction of X and Y-axis, and to improve electrical properties y of the device by increasing the surface area of the storage electrode. CONSTITUTION: An insertion pattern is in the storage electrode. The insertion pattern is shaped like a bar type, a pillar type, or a cross type. In the process of forming the insertion pattern, a step of the insertion pattern can be reduced by overetching process, without separation of the inner wall of the storage electrode. Therefore, the capacitance of the storage electrode increases and the process margin in a photolithography improves.
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