发明名称 |
ADJUSTABLE TRIGGER VOLTAGE CIRCUIT FOR SUB-MICROMETER SILICON IC ESD PROTECTION |
摘要 |
An electrostatic protection (ESD) circuit for an integrated circuit (IC) includes a string of a plurality of diodes connected between a Vss line and a Vdd line. A first PMOS transistor and a first NMOS transistor are connected in series between the Vdd line and the string of diodes. The first PMOS transistor has a gate connected between two of the diodes of the string, and the NMOS transistor has a gate connected to the Vdd line. A second PMOS transistor and a second NMOS transistor are connected in series between the Vss line and the Vdd line with the PMOS transistor having a gate connected to the junction between the first PMOS transistor and the first NMOS transistor, and the second NMOS transistor having a gate connected to the Vdd line. A clamp NMOS transistor is connected between the Vss line and the Vdd line and has a gate connected to the junction between the second PMOS transistor and the second NMOS transistor. A diode may be connected between the Vdd line and the second PMOS transistor.
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申请公布号 |
WO0111749(A1) |
申请公布日期 |
2001.02.15 |
申请号 |
WO2000US21229 |
申请日期 |
2000.08.04 |
申请人 |
SARNOFF CORPORATION |
发明人 |
AVERY, LESLIE, RONALD;GARDNER, PETER, DARYL |
分类号 |
H01L27/02;H03K17/0814;H03K17/30;(IPC1-7):H02H9/04 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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