| 摘要 |
<p>The aim of the invention is to obtain quantum components and devices with micro-islands which are identical in terms of their dimensions, structure and density. The inventive component with monoelectron elements comprises a source (28) and a drain (29) which are configured in a semiconductor substrate (27). A tunnel oxide layer (24) is applied to said semiconductor substrate; opposite a gate (25) that is located between the source and the drain and at a distance therefrom. The monoelectron elements are micro-islands in the form of essentially cylindrical segments which are uniformly distributed in a dielectric material (23) located between the tunnel oxide (24) and the gate (25). Each micro-island comprises at least one thin layer of semiconductor material (21) capped with a thin layer of dielectric material (22) which is contact with the gate. The invention also relates to a method for producing components of this type and to a multi-chamber reactor for carrying out the method.</p> |
