发明名称 |
METHOD FOR SUPPRESSING GENERATION OF REACTIVITY BY-PRODUCT |
摘要 |
PURPOSE: A method for suppressing generation of a reactive by-product is to miniature a generation of a particle and a reactivity by-product by correcting a conventional process condition so that an optimum etching is achieved. CONSTITUTION: A method for preventing a reactivity by-product being generated comprises the steps of: depositing an oxide film on a wafer completed with a cleaning; loading the wafer into a chamber in which a film etching process performed; executing an etching process in accordance with a process condition used in the film etching process; analyzing a component and amount of a contaminant remaining on the oxide film after the etching process is completed; and correcting the process condition by evaluating a contamination rate of a metal by using the analyzed resultant and examining a correlation between the contaminant and the metal to be etched. The oxide film is deposited at a thickness of 3000 angstroms. The component and amount of the contaminant is analyzed by using a TXRF(Total Reflection X-Ray Fluorescence).
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申请公布号 |
KR20010010516(A) |
申请公布日期 |
2001.02.15 |
申请号 |
KR19990029459 |
申请日期 |
1999.07.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JEONG JU;KIM, JIN SEONG;LEE, YEONG CHEOL;LEE, YEONG GU |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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地址 |
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