METHOD FOR FORMING MULTILAYER METAL THIN FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A thin film forming method is to enable deposition of a multilayer thin film at a high temperature and to reduce cost by making a photoresist pattern to endure at a high temperature without change of shape and by changing a process condition to enable forming of the metal film having a desired shape. CONSTITUTION: A method for forming a multilayer thin film of a semiconductor device comprises the steps of: forming a photoresist film on a semiconductor substrate; accomplishing soft baking at a temperature of 120 to 140 deg.C; etching a predetermined part of the photoresist film to expose a surface of the substrate on which the multilayer metal thin film is to be formed and to form a photoresist pattern; accomplishing UV-curing at a temperature of 50 to 70 deg.C; accomplishing a vacuum baking at a temperature of 150 to 200 deg.C; depositing the multilayer metal thin film onto the resultant without disrupting the vacuum; and removing the photo resist pattern by applying a lift off process.