发明名称 |
INDUCTIVE COUPLED PLASMA REACTOR |
摘要 |
PURPOSE: An inductive coupled plasma reactor is to prevent the damage of an antenna pin during the plasma process, therefor preventing the generation of a particle due to etching Ar gas. CONSTITUTION: An inductive coupled plasma reactor comprises a reaction chamber(200); a chuck(208) disposed in the reaction chamber and comprising a surface for accepting and supporting a semiconductor wafer(206); and a sealing member for preventing an entry of Ar gas during the plasma process. The chuck comprises the first portion contacted with the semiconductor wafer; the second portion disposed in a lower portion of the first portion and comprising a plurality of holes in its side surface; an antenna pin(214) inserted into the hole of the second portion for measuring a direct current bias of the first portion. Since an antenna pin cap is inserted into a gap between the antenna pin and the hole, the entry of the gas is further prevented during the process.
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申请公布号 |
KR20010010435(A) |
申请公布日期 |
2001.02.15 |
申请号 |
KR19990029323 |
申请日期 |
1999.07.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, HUI JEONG;PARK, JAE GU |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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