发明名称 INDUCTIVE COUPLED PLASMA REACTOR
摘要 PURPOSE: An inductive coupled plasma reactor is to prevent the damage of an antenna pin during the plasma process, therefor preventing the generation of a particle due to etching Ar gas. CONSTITUTION: An inductive coupled plasma reactor comprises a reaction chamber(200); a chuck(208) disposed in the reaction chamber and comprising a surface for accepting and supporting a semiconductor wafer(206); and a sealing member for preventing an entry of Ar gas during the plasma process. The chuck comprises the first portion contacted with the semiconductor wafer; the second portion disposed in a lower portion of the first portion and comprising a plurality of holes in its side surface; an antenna pin(214) inserted into the hole of the second portion for measuring a direct current bias of the first portion. Since an antenna pin cap is inserted into a gap between the antenna pin and the hole, the entry of the gas is further prevented during the process.
申请公布号 KR20010010435(A) 申请公布日期 2001.02.15
申请号 KR19990029323 申请日期 1999.07.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, HUI JEONG;PARK, JAE GU
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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