METHODE FOR FORMING CONTACT

摘要

PURPOSE: A method for forming a contact is provided to remove an impurity layer brought about in a contact etching process. CONSTITUTION: A source/drain(26) is formed on a semiconductor substrate(21) having a gate electrode(23). An insulating layer(27) is formed on the entire surface of the gate electrode(23). A photoresist(28) is applied to the insulating layer(27) and selectively patterned so that the region of a self aliened contact is defined. After that, the insulating layer(27) is etched to form a contact hole(29). Reactive by-products(30) from etching the insulation layer is removed thorugh double steps. A polysilicon is deposited on the insulating layer(27) and patterned to form storage node(31).