| 摘要 |
<p>Method for making an electron emissive film comprises: (a) providing a substrate (102); (b) providing a plasma reactor (101) having a reaction chamber (103), the reaction chamber having a temp. and a pressure adjustably controlled; (c) placing the substrate in the chamber; (d) flowing gases including hydrocarbon gas into the chamber; (e) igniting a plasma in the plasma reactor; (f) forming a tetrahedral shaped cpd. in the plasma reactor; and (g) depositing an electron emissive film (116) on the substrate. Also claimed is a method for making an electro-emissive material by providing a plasma CVD system including a susceptor (104) in the reaction chamber for holding the substrate, a temp. control system to adjust the substrate temp. between 10-80 deg.C and a pressure control system to adjust the chamber pressure from 10-100 milli torr. The substrate is placed on the susceptor and hydrogen, hydrocarbon and argon gas are flared in the reaction chamber. Plasma is generated and the CVD system forms tetrahedral shaped cpd. that seeds the reaction chamber and the substrate, and a film is deposited. Also claimed is an electron emissive film comprising a substrate with a surface; and an electron emissive film having disjoint small domains of carbon with sp3 bonding disposed on the substrate.</p> |
