发明名称 |
METHOD OF MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR SHEET AND METHOD OF MANUFACTURING SPECIAL SUBSTRATE |
摘要 |
PURPOSE: A method of manufacturing a single crystal semiconductor sheet and a method of manufacturing a special substrate using the same are to manufacture the semiconductor sheet having the single crystal instead of a wafer, therefor obtaining a high operating speed and a high power. CONSTITUTION: A method of manufacturing a single crystal semiconductor sheet comprises the steps of: forming a base layer by doping a soluble material on an upper portion of a support(210); forming an amorphous semiconductor film(230) on the upper portion of the base layer; attaching a single crystal semiconductor seed to one side of the amorphous semiconductor film; removing the base layer using a solvent of the soluble material; and converting the amorphous semiconductor film into the single crystal semiconductor by illuminating in turn a connecting portion of the single crystal semiconductor to the amorphous semiconductor with a laser device(260).
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申请公布号 |
KR20010010672(A) |
申请公布日期 |
2001.02.15 |
申请号 |
KR19990029692 |
申请日期 |
1999.07.22 |
申请人 |
MINUTA TECHNOLOGY |
发明人 |
KIM, JIN UK;LEE, HONG HUI |
分类号 |
H01L21/34;(IPC1-7):H01L21/34 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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