METHOD FOR MANUFACTURING CELL CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a cell capacitor is provided to increase capacitance without increasing a height and an area of a storage electrode, by using the phenomenon that oxygen rapidly diffuses at a grain boundary of polysilicon. CONSTITUTION: After a transistor is formed in a cell region of a semiconductor substrate(21), a bit line(29) selectively connected to a source of the transistor by the first insulating layer is formed. After the second insulating layer is formed to manufacture a node contact(31A,31B) selectively connected to a drain the transistor, the third and fourth insulating layers are formed. The fourth and third insulating layers are selectively etched to expose a part of the second insulating layer including the node contact and the first polysilicon layer is deposited. After the first polysilicon layer is oxidized to form an oxide layer(35), the oxide layer formed on the second insulating layer including the fourth insulating layer and the node contact is etched. After the second polysilicon layer(36) is deposited and a spin-on-glass(SOG) layer is formed, the SOG layer is etched back to selectively expose the second polysilicon layer formed on the fourth insulating layer. The exposed second polysilicon layer is etched and the remaining SOG layer is etched. After the fourth insulating layer is selectively removed, the third polysilicon layer is deposited and etched back. A surface area enhanced silicon(SAES) process is performed regarding the third polysilicon layer and a dielectric layer and a plate electrode are formed.