发明名称 Cooling gas used with a self-sputtering method
摘要 A plasma sputtering reactor (10), particularly one designed for sustained self-sputtering of copper or for low-pressure sputtering, in which the pedestal (16) supporting the wafer (18) to be sputter deposited includes backside cooling or heating of the wafer through a thermal transfer gas (60), the thermal transfer gas being helium. Argon (24) is supplied to strike the plasma (38) and may be additionally supplied during operation for low-pressure sputtering. <IMAGE>
申请公布号 EP1076110(A1) 申请公布日期 2001.02.14
申请号 EP20000306918 申请日期 2000.08.14
申请人 APPLIED MATERIALS, INC. 发明人 FU, JIANMING
分类号 C23C14/50;C23C14/34;C23C14/35;C23C14/54;H01L21/00;H01L21/203;H01L21/28;H01L21/285 主分类号 C23C14/50
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