发明名称 |
Memory device with address translation for skipping failed memory blocks |
摘要 |
A semiconductor memory device capable of operating normally even when a failed memory cell remains after repair. The semiconductor memory device includes a plurality of memory cell array blocks, and address decoding circuitry for receiving an address and for accessing good memory cell array blocks and skipping failed memory cell array blocks.
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申请公布号 |
US6188619(B1) |
申请公布日期 |
2001.02.13 |
申请号 |
US19990339377 |
申请日期 |
1999.06.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG SEONG-OOK |
分类号 |
G11C8/12;G11C29/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C8/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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