发明名称 Memory device with address translation for skipping failed memory blocks
摘要 A semiconductor memory device capable of operating normally even when a failed memory cell remains after repair. The semiconductor memory device includes a plurality of memory cell array blocks, and address decoding circuitry for receiving an address and for accessing good memory cell array blocks and skipping failed memory cell array blocks.
申请公布号 US6188619(B1) 申请公布日期 2001.02.13
申请号 US19990339377 申请日期 1999.06.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG SEONG-OOK
分类号 G11C8/12;G11C29/00;(IPC1-7):G11C7/00 主分类号 G11C8/12
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