发明名称 METHOD AND DEVICE FOR GROWING HIGH QUALITY SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To obtain a high purity and high performance single crystal even when the viscosity of a raw material liquid is high by providing a blade body or a baffle in the raw material liquid in a crucible and pulling up the single crystal while rotating the crucible without rotating the blade body, or the like. SOLUTION: When a single crystal is grown by bringing a seed crystal 4 supported by a seed rod 3 into contact with a molten raw material liquid 2 obtained by heating in a crucible 1, a blade body 5 is provided in the raw material liquid 2 and the crystal is grown while rotating the crucible 1. Further, a rotating body 6, which rotates in the state such that the crucible is mounted on it, is also provided in a device. The seed rod 3 is pulled up upward while being rotated or being kept in a static state. Thus, the stirring effect on the raw material liquid 2 is enhanced by providing the blade body 5 and rotating the crucible 1, thereby the thickness of a diffusion boundary layer, which causes troubles at the time of growing, can be made thin and the supplying amount of raw material to the growing surface is increased, and further, it becomes possible to uniformize the degree of supersaturation.
申请公布号 JP2001039791(A) 申请公布日期 2001.02.13
申请号 JP20000150679 申请日期 2000.05.22
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 SASAKI TAKATOMO;MORI YUSUKE;YOSHIMURA MASASHI
分类号 C01G33/00;C01D17/00;C01F17/00;C01G35/00;C30B9/00;C30B15/30;C30B17/00;C30B29/22;C30B29/30;(IPC1-7):C30B9/00 主分类号 C01G33/00
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