发明名称 Using ion implantation to create normal layers in superconducting-normal-superconducting Josephson junctions
摘要 A SNS Josephson junction (10) is provided for use in a superconducting integrated circuit. The SNS junction (10) includes a first high temperature superconducting (HTS) layer (14) deposited and patterned on a substrate (18), such that the first HTS layer (14) is selectively removed to expose a top surface of the substrate (18) as well as to form an angular side surface (22) on the first HTS layer (14) adjacent to the exposed top surface of the substrate (18). Ion implantation is used to form a junction region (12) having non-superconducting properties along the angular side surface (22) of the first HTS layer (14). A second HTS layer (16) is then deposited and patterned over at least a portion of the first HTS layer (14) and the exposed top surface of the substrate (18), thereby forming a SNS Josephson junction.
申请公布号 US6188919(B1) 申请公布日期 2001.02.13
申请号 US19990314774 申请日期 1999.05.19
申请人 TRW INC. 发明人 LAGRAFF JOHN R.;MURDUCK JAMES M.;CHAN HUGO W-K.
分类号 H01L39/22;H01L39/24;(IPC1-7):H01L29/06 主分类号 H01L39/22
代理机构 代理人
主权项
地址