SILICON WAFER FOR LAMINATING EPITAXIAL LAYER AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To form an epitaxial layer being a thin film on the surface of which trace of COP and LD are almost not generated when it is formed and whose electrical characteristics are improved and the production yield is high. SOLUTION: A silicon wafer is used for laminating an epitaxial layer of a thin film. In the silicon wafer, the number of particles and the number of interstitial dislocations due to crystallization are controlled to be 0 to 10 per wafer, respectively. The silicon wafer has an electrical resistance of <=0.02Ωcm, and an epitaxial thin layer being a thin film having an electrical resistance of >=0.1Ωcm is formed on the wafer by a reduced pressure CVD method. The thickness of the epitaxial thin layer is preferably 0.5 to 5μm.