| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing, in a large quantity, fine, uniform metal balls having high sphericity and uniform particle size distribution. SOLUTION: A minute crucible 1 is prepared by forming a plurality of minute holes in the (001) plane of a silicon wafer W and then applying burning in an oxidizing atmosphere to form SiO2 film on the inner surface. Subsequently, a film of metal to be formed into metal ball is formed on the inner surface of the minute crucible 1. Then, the wafer W is heated to bring the metallic film in the minute crucible 1 into a molten or semi-solid state, and the resultant metallic molten body is spheroidized by surface tension. By this method, a fine metal ball P is obtained.
|
