| 摘要 |
PROBLEM TO BE SOLVED: To provide a PCVD film forming device hard to be influenced from wall potentials such as a heater unit holding a substrate and a film forming unit supporting a discharge electrode. SOLUTION: This device is provided with an earth electrode 2 holding a substrate, a discharge electrode 5 arranged oppositely to the substrate on the earth electrode, a gas feeding mechanism 6 feeding reactive gas on the space between the discharge electrode and the substrate on the earth electrode, a high frequency power source applying high frequency on the discharge electrode and generating discharge plasma on the space with the substrate and a potential controller controlling a plasma density distribution by changing the potential conditions of a member contributing to the generation and extinguishment of discharge plasma of the one other than that of the discharge electrode. |
