发明名称 POLYSILANE CHEMICALLY BOUND TO CRYSTALLINE SILICON SURFACE AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To produce a polysilane capable of producing electrical interactions between a crystalline silicon substrate with a polysilane and useful for construction, etc., of a silicon complex device by chemically binding the polysilane to the surface of the crystalline silicon with at least one terminal of the main chain thereof. SOLUTION: This polysilane is chemically bound to the surface of a crystalline silicon and is obtained by chemically binding the polysilane through an alkyl group to the surface of the crystalline silicon with at least one terminal of the main chain. The polysilane is preferably produced by reacting Si-H on the surface of the crystalline silicon with X(CH2)n-2CH=CH2 (n is an integer of >=2; X is a halogen), forming X(CH2)nSi on the surface, reacting the crystalline silicon with a lithated polysilane in which at least one terminal is lithated and chemically binding at least one terminal of the main chain of the lithiated polysilane to the surface of the crystalline silicon.
申请公布号 JP2001040095(A) 申请公布日期 2001.02.13
申请号 JP19990215906 申请日期 1999.07.29
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 FURUKAWA KAZUAKI;EHATA KEISUKE
分类号 C08G77/60;(IPC1-7):C08G77/60 主分类号 C08G77/60
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