| 摘要 |
PROBLEM TO BE SOLVED: To provide a closed tube-type LPE growing device capable of growing an epitaxial layer having good uniform thickness within a substrate face and an LPE growing method for a compound semiconductor using the same. SOLUTION: In the closed tube-type LPE growing device, whole terminal part of the periheral part of a crystal substrate 2 for growing is covered with a side wall part 4 having an opening part 12. By this structure, the phenomena that abnormal growth, as conventionally observed, at the terminal part being opened of the crystal substrate for growing occurs and the distribution in the film thickness of the grown epitaxial layer becomes U-shaped distribution can be suppressed, and the good uniformity in the film thickness within the substrate face can be obtained. Further, the uniformity in the film thickness is improved by providing a taper at the opening part 12 in such a manner that the area of the cross section of the opening part becomes smaller as it becomes close to the surface of the crystal substrate 2 for growing the crystal. Moreover, grooves are provided at the corner part of the opening part so that the residual melt falls into the grooves.
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