发明名称 |
Storage capacitor structure |
摘要 |
A storage node to be a lower electrode of a capacitor is electrically connected to a polysilicon columnar conductive body filling a contact hole with a second polysilicon film therebetween. The second polysilicon film covers the inside of an opening portion formed in the first polysilicon film. The polysilicon film columnar conductive body is electrically connected to a source/drain region of an MOS transistor at a contact. Thus, a semiconductor device with good electrical connection between the capacitor and the transistor may be provided.
|
申请公布号 |
US6188099(B1) |
申请公布日期 |
2001.02.13 |
申请号 |
US19970856482 |
申请日期 |
1997.05.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKATANI YASUO |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|