| 摘要 |
The present invention discloses a method of forming self-aligned unlanded via holes. First, a substrate having a patterned conductive layer on its surface is provided, and then a first dielectric layer is deposited on the substrate by using high density plasma chemical vapor deposition (HDP CVD). Next, a silicon nitride layer and a second dielectric layer are sequentially deposited on the first dielectric layer. Thereafter, the second dielectric layer, the silicon nitride layer and the first dielectric layer are etched back to remove a portion of the silicon nitride layer overlying the patterned conductive layer. Finally, a third dielectric layer is deposited, and then via holes are defined in the third dielectric layer.
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