发明名称 Output synchronization-free, high-fanin dynamic NOR gate
摘要 An output synchronization-free NOR gate detects the all-zero scenario for an n-bit word. The n-bit word having a selected bit that is defined using a high-inactive convention, and (n-1) non-selected bits that are defined using a high-active convention. The NOR gate includes an output FET, a pre-charging circuit, a first evaluation circuit, and (n-1) second evaluation circuits. The pre-charging circuit charges the output FET gate, drain, and source to a pre-charge voltage during a low clock cycle. During a clock high cycle, the first evaluation circuit evaluates the selected bit and discharges the pre-charge voltage on the output FET source if the selected bit is a voltage high. The (n-1) second evaluation circuits evaluate the non-selected bits and maintain the pre-charge voltage on the output FET gate if each of the non-selected bits is a voltage low. The output FET conducts if the pre-charge voltage is maintained on the output FET gate and if the output FET source is discharged to ground. The drain of the output FET discharges to a low voltage if the output FET conducts, which indicates the all-zero scenario for the n-bit word.
申请公布号 US6188248(B1) 申请公布日期 2001.02.13
申请号 US19990383401 申请日期 1999.08.26
申请人 MIPS TECHNOLOGIES, INC. 发明人 REAVES JIMMY LEE
分类号 G06F7/02;H03K19/096;(IPC1-7):H03K19/096;H03K19/094;H03K19/20 主分类号 G06F7/02
代理机构 代理人
主权项
地址