| 摘要 |
PROBLEM TO BE SOLVED: To provide a divided type ITO target obtd. by joining plural ITO sintered bodies to the surface of a single backing plate, in which the generation of nodules to be generated in the periphery of the divided parts is reduced even in the case sputtering by low applied electric power is executed. SOLUTION: In a multidivided ITO sputtering target obtd. by joining plural ITO sintered bodies substantially consisting of indium, tin and oxygen to the surface of a single backing plate, the width of the divided part formed by the adjacent sintered bodies is controlled to 0.05 to 0.20 mm, and a solder material is not allowed to exist at the bottom part of the divided part. The width of the divided part is desirably controlled to 0.05 to 0.20 mm. |
