| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor, by which the nitride semiconductor reduced in the dislocation and good in the crystallinity can be obtained, and to provide a nitride semiconductor element which is produced by using as a substrate the nitride semiconductor obtained by the method and exhibits good life characteristic. SOLUTION: This method for growing a nitride semiconductor comprises the first process of growing a first nitride semiconductor 2 on a different kind of substrate 1, the second process of partially forming uneven parts in the first nitride semiconductor 2 in order to expose faces on the side faces of the uneven parts so that the nitride semiconductor can be grown in the horizontal direction on the faces and the third process of growing a second nitride semiconductor 3 on the first nitride semiconductor 2 having the uneven parts under the condition of the pressure higher than the normal pressure. |
