发明名称 |
Method of forming a device isolation region |
摘要 |
A method of forming a device isolation region includes the steps of: forming a first dielectric film and an oxidation-resistant deposition film successively on a semiconductor substrate; forming a trench groove in the semiconductor substrate by successively processing the oxidation-resistant deposition film, the first dielectric film and the semiconductor substrate by anisotropic etching; forming a second dielectric film to cover at least an inner surface of the trench groove; depositing a third dielectric film in the trench groove so that the thickness of the third dielectric film buried in the trench groove is larger than a depth of the trench groove; planarizing a surface of the third dielectric film and an upper surface of the trench groove; and removing the oxidation-resistant deposition film and the first dielectric film to form the device isolation region, wherein a thermal treatment of the entire substrate is carried out to densify the third dielectric film and to oxidize an interface between the second dielectric film and the semiconductor substrate.
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申请公布号 |
US6187648(B1) |
申请公布日期 |
2001.02.13 |
申请号 |
US19990270755 |
申请日期 |
1999.03.17 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
DOI TSUKASA;OHNISHI SHIGEO;IGUCHI KATSUJI;SHINMURA NAOYUKI |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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