| 摘要 |
PROBLEM TO BE SOLVED: To provide a (poly)silicon-wafer cleaning liquid with a very low etching rate by using an aqueous alkali solution containing a surfactant. SOLUTION: Preferably, the etching rate is 1/2 of or lower than that in the case when the surfactant is not contained. Preferably, the surfactant is one represented by the formula: RCOOM, the formula: RSO3M, formula I, formula II or formula III or one represented by the formula: R' (CH2CH2O)qR", formula IV, the formula: R'O(CH2CH2O)qR" or formula V. In these formulas, R is (F-substituted) 8-30C alkyl; M is H, an alkali metal or ammonium; R' is (F- substituted) 6-30C alkyl; R" is H or R'; and q is 1-20. Preferably, an alkaline substance contained in the aqueous alkali solution is ammonia or amine represented by the formula: R1R2R3N or an ammonium hydroxide represented by the formula: [(R1)(R2)(R3)(R4)N]+OH-. In these formulas, R1 to R4 are each H or (OH-substituted) 1-6C alkyl.
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