发明名称 COMPOSITE TREATMENT OF FILM SUBSTRATE AND COMPOSITE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a composite treating device which continuously subjects a film-like long-sized substrate to deposition of a-Si and p-Si chemical conversion treatment of a-Si. SOLUTION: This device has a transporting means for transporting the film- like long-sized substrate 10 in one direction, a deposition device 20 which has a differential exhaust device 21 in the inlet and outlet of the long-sized substrate and executes deposition on the long-sized substrate and a laser treating device which subjects the long-sized substrate arranged at the downstream side of the deposition device, emerging from the deposition device to a reforming treatment by irradiating the substrate with a laser beam.
申请公布号 JP2001040485(A) 申请公布日期 2001.02.13
申请号 JP19990210961 申请日期 1999.07.26
申请人 SUMITOMO HEAVY IND LTD 发明人 HAMADA SHIRO
分类号 H01L21/20;C23C14/58;C23C16/24;C23C16/56;(IPC1-7):C23C16/56 主分类号 H01L21/20
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