Ohmic electrode structure, semiconductor device including such ohmic electrode structure, and method for producing such semiconductor device

摘要

An ohmic electrode structure includes an n-InxGa1-xAs layer where 0<x<=1; a Pt or Pd layer provided on the n-InxGa1-xAs layer; and at least one metal layer provided on the Pt or Pd layer. A semiconductor device includes a substrate; a first semiconductor layer having a p-type conductivity provided on the substrate; a second semiconductor layer having an n-type conductivity provided on the substrate; an ohmic contact layer provided on the first semiconductor layer; a barrier layer provided on the second semiconductor layer; a first electrode provided on the ohmic contact layer; and a second electrode provided on the barrier layer. The ohmic contact layer and the barrier layer are each formed of a material selected from the group consisting of Pt and Pd.