| 摘要 |
A semiconductor memory device includes a redundancy word driver to select a redundancy memory cell and a main word driver to select a normal memory cell, wherein it is judged on the basis of an address input whether a redundancy memory cell or a main word is selected and thereby, a time to drive a word line is shortened. In a redundancy judgment circuit, control signals RDC0 to activate redundancy word drivers and a control signal XDC to activate a main word driver are produced, by using dynamic NOR circuits and a dynamic AND circuit that can each set an initial state of an output signal thereof regardless of an input signal, wherein the control signals RDC and XDC in initial states are respectively set to levels at which the redundancy word drivers and main word driver are all inactive.
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