| 摘要 |
<p>Porous semiconductor material in the form of crystalline silicon (12) is produced with a porosity in exccess of 90 %, and voids, crazing and peeling of the material are substantially by scanning electron microscopy at a magnification of 7,000. The material (12) is prepared by anodization of a silicon wafer (10) to produce porous silicon, followed by etching of the porous silicon to produce pore overlap defining silicon quantum wires. After etching, the porous silicon is dried by supercritical drying. The resulting material has good properties together with good morphology and crystallinity.</p> |
