Semiconductor element having vertical discrete bipolar transistor and semiconductor device having same

摘要

An emitter conducting portion, which comprises a p+-type silicon substrate 10, p+-type emitter buried region 14 and a p+-type emitter leading region 20, is formed in a semiconductor element. The p+-type silicon substrate 10 of the semiconductor element is die-bonded to an emitter lead ER for electrically connecting an emitter electrode E to the emitter lead ER by means of the emitter conducting portion. Thus, it is possible to dispense with an emitter bonding wire for connecting the emitter electrode E to the emitter lead ER, and it is possible to remove impedance caused by the emitter bonding wire, so that it is possible to improve the high-frequency characteristics of a semiconductor device.