| 摘要 |
An apparatus is disclosed for the coating of substrates (10) with thin films, having a vacuum chamber (1), a target (6) to be atomized, situated opposite the substrate (10) in the vacuum chamber (1), with magnets (19, 19', 19''; 20, 20', 20'') to produce a magnetic tunnel in front of the area of the target (6) to be atomized, an inlet (8) for a process gas into the process space (11), an anode (12), which is electrically insulated with respect to the vacuum chamber (1), and a current-voltage supply to produce a plasma in front of the target (6). The target (6) is shaped as a rotation-symmetrical body, which provides a ring-shaped enclosure around the substrate (10), wherein the magnets (19,19', . . . ; 20,20', . . . ) are supported on the side of the hollow cylindrical target (6), facing away from the substrate (10), and can move around the rotational axis (R) of the target (6). The substrate (10) is electrically insulated, with respect to the vacuum chamber (1), and a part of an insulator (13), configuring the anode (12), is supported on the bottom of the process space (1).
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