| 摘要 |
PROBLEM TO BE SOLVED: To suppress decrease in the sensitivity of a pixel cell and the occurrence of persistence of vision by forming an image detection region so that a device width reaches the maximum near a travel gate and increasing the amount of electric charge being eliminated from an image detection device. SOLUTION: An image detection device 41 is formed on a semiconductor substrate and has an active detection region 47 being surrounded by a field oxide 48. The image detection region 47 is formed by a rectangular region that is partitioned by a tapered region. Then, the width of the image detection region 47 reaches the maximum at a rectangular region 49 with a device width W49 adjacent to a travel gate 42 and decreases in the direction toward a rectangular region 53 that is a rectangular region being away from the travel gate 42. As a result, when the travel gate 42 is enabled, the electrostatic barrier between the image detection region 47 and a source region is reduced, and an entire electric charge in the image detection region 47 can be moved to the source region.
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