发明名称 METHOD FOR FORMATION OF FILM AND ELECTRODE OR WIRING
摘要 PROBLEM TO BE SOLVED: To provide a method, which can arrange a desired film and electrodes or a wiring at low cost. SOLUTION: A metal film 4 is formed on a silicon substrate 1 from a state that electrode parts 3 and an insulating film 2 are exposed on the substrate 1. Moreover, a stress adjusting film 5 for adjusting a stress applied to the interface between the film 4 and the base film of the film 2 is formed on the film 4. The film 4 on the electrode parts 3 is left using an adhesive sheet 7, and the film 4 on the film 2 is peeled from the film 2. After the film 4 is formed on the substrate 1, the adhesive force between the parts 3 and the film 4 and the adhesive force between the films 2 and 4 are strong, and the film 4 is put in a state such that the film 4 cannot be peeled from the electrode parts 3 and the film 4 cannot be peeled from the film 2, but the adhesive force between the films 2 and 4 is reduced by the film 5 until the range that the film 4 can be peeled from the film 2.
申请公布号 JP2001035854(A) 申请公布日期 2001.02.09
申请号 JP20000143380 申请日期 2000.05.16
申请人 DENSO CORP 发明人 KONDO ICHIJI;ISHIHARA YASUO;NAGAHAKA SHUICHI;MIYAJIMA TAKESHI
分类号 H01L21/28;H01L21/3205;H01L21/60;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/28
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