| 摘要 |
PROBLEM TO BE SOLVED: To provide a package for housing a semiconductor element in which the electric characteristics of a metalized wiring layer for a power source and a metalized wiring layer for ground are made excellent, and the mechanical strength of an insulating substrate is made excellent. SOLUTION: This package for housing a semiconductor element is constituted of an insulating substrate 1 and a cover body 3, and provided with a void for housing a semiconductor element 3 inside. In this case, a metalized wiring layer 7a for a power source and a metalized wiring layer 7b for ground whose thickness ranges from 15μm to 30μm with which the power source electrode and ground electrode of the semiconductor element 3 are connected are formed across almost the whole area of the cross-sectional direction of the insulating substrate 1, and the thickness of the outer peripheral part of each metalized wiring layer 7a for a power source and the metalized wiring layer 7b for ground is made not more than half the thickness of each metalized wiring layer 7a and 7b. |
