MASK BLANK OR MASK, THEIR PRODUCTION AND EXPOSURE METHOD USING THE MASK

摘要

PROBLEM TO BE SOLVED: To prevent a change of line width and a change of focal tolerance, to remarkably enhance the resolving power of a pattern and to enhance the yield of a device producing process. SOLUTION: When at least one thin film 12 including at least one thin film of a zirconium-containing compound is formed on a substrate material 11 to obtain a mask blank, the thin film 12 is modified by irradiation with electromagnetic waves 14 of 0.1-15μm wavelength having energy intensity required for modifying the thin film 12. By the modification of the film, in particular the modification of a part of the film near its surface, a change of transmittance or phase contrast in the storage or use of a mask is reduced, accordingly a change of line width and a change of focal tolerance are prevented, the resolving power of a pattern is remarkably enhanced and the yield of a semiconductor device producing process is enhanced.