| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacture for a semiconductor device which will not be formed to slide to a drain electrode side or a source electrode side with a gate embedding part of a gate electrode to a projection part, when manufacturing a semiconductor device containing a semiconductor substrate having a gate embedding layer. SOLUTION: A first insulation layer 6 is formed on a surface of a semiconductor substrate 1 to form a first opening 8. Next, a second insulation layer 9 is etched, and the center part of a gate burying layer in the first opening 8 is exposed, and also a pair of sidewalls 10a, 10b at a prescribed width of the second insulation layer 9 is formed on the inner face side of the first opening 8, and the sidewalls 10a, 10b and the first insulation layer 6 are used as a mask, and a second opening part 11 having a narrower width than the first opening 8 is formed by etching in a gate embedding layer on the downside of the first opening 8. At least one of the sidewalls 10a, 10b is removed, and after a gate electrode metal layer is deposited in the first opening 8 and the second opening 11, the first insulation layer 6 is removed to form a gate electrode 13.
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