发明名称 SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
摘要 PROBLEM TO BE SOLVED: To reduce noise by providing an interlayer dielectric, an interconnection layer and a dummy pattern which planarizes the interlayer dielectric and shields the interconnection layer. SOLUTION: First and second dummy patterns 1, 2 are formed in a region having no interconnection for the purpose of planarization. An Al interconnection 3 is interposed between the first and second dummy patterns 1, 2. More specifically, the first dummy pattern 1 is located on the left side of the Al interconnection 3 and the second dummy pattern 2 is located on the right side thereof. Potential of the first and second dummy patterns 1, 2 is fixed at the power supply voltage by connecting them with the power supply. The dummy patterns 1, 2 having a fixed potential exhibit the effect of shield wire and reduces noise on the actual interconnection, i.e. the Al interconnection 3, surrounded by the dummy patterns 1, 2.
申请公布号 JP2001035853(A) 申请公布日期 2001.02.09
申请号 JP20000069883 申请日期 2000.03.14
申请人 SEIKO EPSON CORP 发明人 HOSAKA TOORU
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L27/04;(IPC1-7):H01L21/320 主分类号 H01L23/52
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