| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of an RST device and at the same time easily incorporate the device into a silicon MOS sequence by setting a charge- injection transistor where the conductive band energy level of a first barrier layer is larger than the conductive band of a second barrier layer at least by a specific value. SOLUTION: A first barrier layer 302 is formed on a substrate 301, a second barrier layer 303 made of oxide is formed on the first barrier layer 302, and a layer 304 is formed on the second barrier layer 303. Then, a hot carrier jumps over the first barrier layer 302 and is implanted into the layer 304 that is formed on the second barrier layer 303. Then, the first barrier layer 302 is thinner as it causes the tunnel phenomenon of the hot carrier, and the second barrier layer 303 is thicker than the first barrier layer 302 and reduces a leak current. Then, a dielectric material with a high permittivity is used as the second barrier layer 303, and a silicon dioxide layer that has a thickness of 20Åor less and has grown is used as the first barrier layer 302.
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