| 摘要 |
PROBLEM TO BE SOLVED: To obtain a MOS transistor, having a poly-metal gate which prevents oxidation of a metal layer to contrive to lower resistance. SOLUTION: A gate electrode GE 1 is provided with a polysilicon layer 4C, a silicon oxide film (smile oxide film) 14, a metal layer 50 and a silicide film 15. The polysilicon layer 4C is formed on a main face 3BS of a gate insulating film 3B, and the silicon oxide film 14 is formed on a sidewall 4C of the polysilicon layer 4C. A metal layer 50C is formed, so as to come into contact with a main face 4CS1 on a side opposite to the gate insulating film 3B of the polysilicon layer 4C. The silicide film 15 is formed on a sidewall 50CW (comprising respective sidewalls 51CW, 52CW of first and second metal layers 51, 52) of the metal layer 50C. After the silicide film 15 is formed, the metal layer 50C is protected by the silicide film 15. |
