| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoconductive switch exhibiting improved performance at the high frequency range. SOLUTION: A photoconductive switch 100 comprises a photoconductive layer 106 which consists of first and second semiconductors, each having a relatively broad energy band gap, and a third semiconductor interposed between the first and second semiconductors. The energy band gap of the third semiconductor is narrower than those of the first and second semiconductors. Further more, the third semiconductor is different from the first and second semiconductors in the conductive type (p-type or n-type), whereby a double heterojunction structure is prepared. Electrodes are disposed at intervals on the surface of the first semiconductor. A low insertion loss and high-isolation photoconductive switch 100 is realized.
|
