| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can be reduced in cell size to have an E2PROM mounted together with a flash memory, without making the manufacturing flow complicated. SOLUTION: Isolation insulating layers P are extended in vertical directions in the figure to separate source regions S into each group. Above the isolation insulating layers P, extended parts of sub-bit lines SB are disposed. Each of the sub-bit lines SB has a projecting part which overhangs the extended part above the source region S. The projecting part is connected to a drain region D via a drain contact DC. A source line SS is installed one for each group. It is extended in parallel with the extended part of the sub-bit line SB, while covering the projecting part of the sub-bit line SB. Directly under the source line SS, the source line SS is connected to the source region S via a source contact SC. The source lines SS in an E2PROM cell section can be formed by one, and the same step as that for word lines in a DINOR cell section and can be installed one for each group.
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